Q331
A monolithic metal oxide semiconductor (MOS) non-polarized capacitor which is a parallel plate capacitor with SiO2 as dielectric. A surface thin film of metal (aluminum) is the top plate. The bottom plate consists of the heavily doped n* region that is formed during emitter diffusion. What is the typical value of capacitance for an oxide thickness of 500 Å of this MOS capacitor? Take the permittivity of dielectric (εr) as 4.
A.
0.1 pF/mil2
B.
0.2 pF/mil2
C.
0.3 pF/mil2
D.
0.4 pF/mil2
AnswerAnswer: Option D
Solution
Answer: Option D
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