Q30
A n-channel silicon (dielectric constant = 12) FET with a channel width a = 2 × 106 m is doped with 1021 electron/m3. The pinch-off voltage is
A.
0.86 V
B.
0.68 V
AnswerC.
8.6 V
D.
6.8 V
Answer: Option B
Solution
Answer: Option B
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