Q96
A semi conductor is irradiated with light such that carriers are uniformly generated throughout its volume. The semiconductor is n-type with ND = 1019/cm3. If the excess electron concentration in the steady state is ∆n = 1015/cm3 and if τp = 10µsec. (minority carrier life time) the generation rate due to irradiation
A.
is 1020 e-h pairs/cm3/s
AnswerB.
is 1024 e-h pairs/cm3/s
C.
is 1010 e-h pairs/cm3/s
D.
cannot be determined, the given data is insufficient
Answer: Option A
Solution
Answer: Option A
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