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ECE · Q219

Electronic Devices And Circuits

Engineering and GATE · ECE · question 219

Q219

An n-type silicon sample of 10-3 m length and 10-10 m2 cross sectional area has an impurity concentration of 5 × 1020 atom/m3. If mobility of majority carries is 0.125 m2/v-sec, then the resistance of the sample will be . . . . . . . .

A.
4 MΩ
B.
1 MΩ
Answer
C.
25 kΩ
D.
5 kΩ

Answer: Option B

Solution

Answer: Option B
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