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ECE · Q159

Electronic Devices And Circuits

Engineering and GATE · ECE · question 159

Q159

Assuming that the electron mobility in intrinsic silicon is 1500 cm2/V-Sec at room temperature (T = 300 K and the corresponding 'volt equivalent of temperature' VT = 25.9 mV, what is the approximate value of the electron diffusion constant?

A.
40 cm2/s
Answer
B.
4 cm2/s
C.
400 cm2/s
D.
4000 cm2/s

Answer: Option A

Solution

Answer: Option A
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