Q118
At a given temperature a semiconductor with intrinsic carrier concentration ni = 1016/m3 is doped with a donor of dopant concentration ND = 1026/m3. Temperature remaining the same the hole concentration in the doped semiconductor is
A.
1026/m3
B.
1016/m3
C.
1014/m3
D.
106/m3
AnswerAnswer: Option D
Solution
Answer: Option D
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