Q161
Consider a silicon sample at T = 300 K, with a uniform donor density Nd = 5 × 1016 cm-3 illuminated uniformly such that the optical generation rate is Gopt = 1.5 × 1020 cm-3 s-1 throughout the sample. The incident radiation is turned off at t = 0. Assume low-level injection to be valid and ignore surface effects. The carrier lifetimes are τp0 = 0.1 µs and τn0 = 0.5 µs. The hole concentration at t = 0 and the hole concentration at t = 0.3 µs, respectively, are
Consider a silicon sample at T = 300 K, with a uniform donor density Nd = 5 × 1016 cm-3 illuminated uniformly such that the optical generation rate is Gopt = 1.5 × 1020 cm-3 s-1 throughout the sample. The incident radiation is turned off at t = 0. Assume low-level injection to be valid and ignore surface effects. The carrier lifetimes are τp0 = 0.1 µs and τn0 = 0.5 µs.
The hole concentration at t = 0 and the hole concentration at t = 0.3 µs, respectively, are
The hole concentration at t = 0 and the hole concentration at t = 0.3 µs, respectively, are
A.
1.5 × 1013 cm-3 and 7.47 × 1011 cm-3
AnswerB.
1.5 × 1013 cm-3 and 8.23 × 1011 cm-3
C.
7.5 × 1013 cm-3 and 3.73 × 1011 cm-3
D.
7.5 × 1013 cm-3 and 4.12 × 1011 cm-3
Answer: Option A
Solution
Answer: Option A
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