Consider an ideal long channel nMOSFET (enhancement-mode) with gate length 10 µm and width 100 µm. The product of electron mobility (µn) and oxide capacitance per unit are (Cox) is µnCox = 1 mA/V2. The threshold voltage of the transistor is 1 V. For a gate-to-source voltage VGS = [2 - sin(2t)] V and drain-to-source voltage VDS = 1 V (substrate connected to the source), the maximum value of the drain-to-source current is . . . . . . . .

Answer: Option C