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ECE · Q71

Electronic Devices And Circuits

Engineering and GATE · ECE · question 71

Q71

Consider the following statements S1 and S2. S1: The threshold voltage (VT) of a MOS capacitor decreases with increase in gate oxide thickness. S2: The threshold voltage (VT) of a MOS capacitor decreases with increase in substrate doping concentration. Which one of the following is correct?

A.
S1 is FALSE and S2 is TRUE
B.
Both S1 and S2 are TRUE
C.
Both S1 and S2 are FALSE
Answer
D.
S1 is TRUE and S2 is FALSE

Answer: Option C

Solution

Answer: Option C
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