Q115
Determine the change in collector current, ∆IC due to change in base emitter voltage VBE from 25°C to 100°C for a Silicon Transistor in Fixed Bias Configuration having β = 100. (Consider following variation in Silicon transistor parameters with temperature-At T = 25°C, VBE = 0.65 V and At T = 100°C. VBE = 0.5 V)
A.
60 µA
AnswerB.
30 µA
C.
15 µA
D.
120 µA
Answer: Option A
Solution
Answer: Option A
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