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ECE · Q253

Electronic Devices And Circuits

Engineering and GATE · ECE · question 253

Q253

In a p-n-p transistor biased in the active region, in the n-type base, holes

A.
drift
B.
diffuse and recombine
Answer
C.
experience avalanche multiplication
D.
are injected from collector

Answer: Option B

Solution

Answer: Option B
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