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ECE · Q52

Electronic Devices And Circuits

Engineering and GATE · ECE · question 52

Q52

In PN junction diode, P side is doped with acceptor concentration of 2 × 1016 cm-3, N side is doped donor concentration of 5 × 1017 cm-3. The contact potential of diode is: Assume thermal equivalent voltage equal to 26 mV and intrinsic carrier concentration equal to 1.45 × 1010 cm-3.

A.
0.82 V
Answer
B.
0.2 V
C.
1.2 V
D.
0 V

Answer: Option A

Solution

Answer: Option A
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