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ECE · Q158

Analog Electronics

Engineering and GATE · ECE · question 158

Q158

Leakage current approximately doubles for every 10°C increase in temperature of a silicon transistor. If a silicon transistor has ICBO = 1000 nA at 30°C, what is its leakage current at 90°C?

A.
32 µA
B.
64 µA
Answer
C.
16 µA
D.
128 µA

Answer: Option B

Solution

Answer: Option B
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