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ECE · Q150

Electronic Devices And Circuits

Engineering and GATE · ECE · question 150

Q150

List-I is four different semiconductor devices. Match each device in List-I with its characteristic property in List-II. List-I List-II a. BJT 1. Population inversion b. MOS capacitor 2. Pinch-off voltage c. LASER diode 3. Early effect d. JFFT 4. Flat-band voltage

List-I is four different semiconductor devices. Match each device in List-I with its characteristic property in List-II.
List-I List-II
a. BJT 1. Population inversion
b. MOS capacitor 2. Pinch-off voltage
c. LASER diode 3. Early effect
d. JFFT 4. Flat-band voltage
A.
a-2, b-1, c-4, d-2
B.
a-1, b-4, c-3, d-2
C.
a-3, b-4, c-1, d-2
Answer
D.
a-3, b-2, c-1, d-4

Answer: Option C

Solution

Answer: Option C
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