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Metallurgical Engineering · Q58

Physics of Metals in Metallurgy

Engineering and GATE · Metallurgical Engineering · question 58

Q58

Silicon is doped with arsenic (concentration 1020 atoms.m-3). At room temperature, the electron and hole mobilities in Si are 0.14 m2.v-1.s-1 and 0.05 m2v-1.s-1 respectively. The conductivity in (Ωm)-1, at room temperature for Si doped with As is

A.
0.11
B.
0.96
C.
2.24
Answer
D.
2.72

Answer: Option C

Solution

Answer: Option C
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