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Metallurgical Engineering · Q69

Physics of Metals in Metallurgy

Engineering and GATE · Metallurgical Engineering · question 69

Q69

The electrical conductivity of pure silicon at 300 K is 4.34 × 10-4 (Ωm)-1 and at 500 K, it is 2.15(ΩM)-1. Given that the Boltzman constant, R = 8.6 × 10-5 eV .K-1, the band energy gap is . . . . . . . . eV.

A.
0.65
B.
1.1
Answer
C.
1.5
D.
2.2

Answer: Option B

Solution

Answer: Option B
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