Vidyalelo
ECE · Q179

Electronic Devices And Circuits

Engineering and GATE · ECE · question 179

Q179

The threshold voltage of an n-channel MOSFET can be increased by

A.
increasing the channel dopant concentration
Answer
B.
reducing the channel dopant concentration
C.
reducing the GATE oxide thickness
D.
reducing the channel length

Answer: Option A

Solution

Answer: Option A
No explanation is given for this question Let's Discuss on Board
PreviousNext
All Electronic Devices And Circuits questions