Q260
Which one of the following expressions may be used to correctly describe the temperature (T) variation of the intrinsic carrier density (ni) of a semiconductor? Eg is the band gap, A is pre-factor's k is Boltzmann constant.
A.
ni(T) = (A/T) exp (-Eg/kT2)
B.
ni(T) = A(Eg/kT)10
C.
ni(T) = A exp(-Eg/2kT)
D.
ni(T) = AT3/2 exp(-Eg/2kT)
AnswerAnswer: Option D
Solution
Answer: Option D
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