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ECE · Q105

Analog Electronics

Engineering and GATE · ECE · question 105

Q105

Consider an n-channel MOSFET with parameters Kn = 0.25 mA/V2, VTN = 1 V, λ = 0, Cgd = 0.04 pF and Cgs = 0.2 pF If the transistor is biased at VGS = 3 V, the unity gain bandwidth of an FET will be

A.
626 MHz
B.
646 MHz
C.
663 MHz
Answer
D.
683 MHz

Answer: Option C

Solution

Answer: Option C
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