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ECE · Q153

VLSI Design And Testing

Engineering and GATE · ECE · question 153

Q153

nMOS devices are formed in . . . . . . . .

A.
p-type substrate of high doping level
B.
n-type substrate of low doping level
C.
p-type substrate of moderate doping level
Answer
D.
n-type substrate of high doping level

Answer: Option C

Solution

Answer: Option C
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