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ECE · Q181

VLSI Design And Testing

Engineering and GATE · ECE · question 181

Q181

The collector contact region is doped with higher concentration of n-type impurities due to . . . . . . . .

A.
It creates a depletion region at the contact surface
B.
It creates a low conductivity path between collector region and contact
C.
It reduces contact resistance
Answer
D.
It can withstand high voltages as compared to collector region

Answer: Option C

Solution

Answer: Option C
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