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ECE · Q100

VLSI Design And Testing

Engineering and GATE · ECE · question 100

Q100

The high current driving capability of the BiCMOS is due to . . . . . . . .

A.
NMOS in saturation mode
B.
PMOS in saturation mode
C.
CMOS
D.
BJT
Answer

Answer: Option D

Solution

Answer: Option D
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