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ECE · Q15

VLSI Design And Testing

Engineering and GATE · ECE · question 15

Q15

The isolated active areas are created by technique known as . . . . . . . .

A.
Etched field-oxide isolation
B.
Local Oxidation of Silicon
C.
Etched field-oxide isolation or Local Oxidation of Silicon
Answer
D.
None of the mentioned

Answer: Option C

Solution

Answer: Option C
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