Q115
What is Piranha Solution?
A.
It is a 3 : 1 to 5 : 1 mix of nitric acid and hydrogen peroxide that is used to develop the oxide layer on silicon substrate
B.
It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrofluoric acid that is used to clean silicon wafers removing organic and metal contaminants or photo resist after metal patterning
C.
It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to grow the oxide layer on the silicon
D.
It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to clean wafers of organic and metal contaminants or photo resist after metal patterning
AnswerAnswer: Option D
Solution
Answer: Option D
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