Tunnel diode is a
A. High resistivity p-n junction diode
B. Slow switching device
C. Amplifier device
D. Highly doped p-n junction diode
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To obtain a P-type semiconductor-
A. The impurity having five valence is added
B. Three valent impurities
C. Both types of compounds
D. None of these
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Which among the following is most helpful in energy savings?
A. Incandescent bulb
B. Fluorescent tube light
C. Compact fluorescent lamp
D. LED bulb
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Assertion (A) Light Emitting Diode (LED) emits spontaneous radiation.
Reason (R) LED are forward biased p - n junction.
A. Both A and R are true and R is the correct explanation of A
B. Both A and R are true, but R is not the correct explanation of A
C. A is true, but R is false
D. A is false, but R is true
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When does a break down occur in junction?
A. Under extreme temperature conditions
B. With forward biased
C. Under reverse biased
D. Due to manufacture defects
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In a n-type semiconductor
A. electrons are the only carriers
B. holes are the only carriers
C. electrons are the majority carriers and holes are the minority carriers
D. None of the above
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Zener diode is used as
A. Half wave rectifier
B. Full wave rectifier
C. AC voltage stabiliser
D. DC voltage stabiliser
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NPN transistors are preferred to PNP transistors because they have
A. low cost
B. low dissipation energy
C. capability of handing large power
D. electrons having high mobility than holes
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The majority charge carriers in a p-type semiconductor are
A. free electrons
B. conduction electrons
C. ions
D. holes
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Where is a transistor most likely to be found?
A. Wrist watch
B. Fuse
C. Hearing aid
D. Fluorescent lamp
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When donor type impurity is added to the semiconductor system. Then
A. electrons will be generated and N-type material
B. electrons will be generated and P-type material
C. Holes will be generated and P-type material
D. Holes will be generated and N-type material
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Assertion (A) An N-type semiconductor has a large number of electrons but still it is electrically neutral.
Reason (R) An N-type semiconductor is obtained by doping an intrinsic semiconductor with a pentavalent impurity.
A. Both A and R are true and R is the correct explanation of A
B. Both A and R are true, but R is not the correct explanation of A
C. A is true, but R is false
D. A is false, but R is true
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Which of the following is widely used in making semiconductor chips?
A. Radium
B. Sodium
C. Germanium
D. Sulphur
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Doping in semi-conductor glossary is:
A. Semi-conductor is a process of purifying matter
B. Doping is a process of increasing the electrons or holes
C. Is a process of increasing external atoms
D. Is a process of increasing the biased potential
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Match the following.
List-I
List-II
a. Germanium at 0 K
1. n-type semiconductor
b. Germanium at room temperature
2. p-type semiconductor
c. Germanium doped with indium
3. Insulator
d. Germanium doped with arsenic
4. Intrinsic semiconductor
A. a-1, b-2, c-3, d-4
B. a-4, b-3, c-2, d-1
C. a-3, b-4, c-2, d-1
D. a-4, b-3, c-1, d-2
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The purpose of the amplifier is to:
A. To increase the voltage, power or current, of the input signals
B. Decreasing the weighted signal under its input
C. Causing distortion in the weighted signal
D. Both B and C
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Which of the following is not a semiconductor?
A. Silicon
B. Krypton
C. Selenium
D. Germanium
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Integrated circuits are made up of which of the following?
A. Aluminium
B. Silicon
C. Glass
D. Iron
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The diode is used as a . . . . . . . .
A. rectifier
B. amplifier
C. magnifier
D. purifier
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The term LASER stand for
A. Light Amplification by Stimulated Emission of Radiation
B. Light Amplification by Spontaneous Emission of Radiation
C. Light Amplification by Stimulated Emission of Rays
D. Light Amplification by Stimulated Energy of Radiation
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