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ECE · Q21

VLSI Design And Testing

Engineering and GATE · ECE · question 21

Q21

The n-well collector is formed by . . . . . . . . .

A.
Lightly doped n-type epitaxial layer on p-Substrate
Answer
B.
Heavily doped n-type epitaxial layer on p-Substrate
C.
Lightly doped n-type diffused layer on p-Substrate
D.
Heavily doped n-type diffused layer on p-Substrate

Answer: Option A

Solution

Answer: Option A
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