For proper amplification by a transistor circuit, the operating point should be located at the ___________ of the d.c. load line
A. The end point
B. Middle
C. The maximum current point
D. None of the above
Select an option to see the answer and solution.
The leakage current in a silicon transistor is about ___________ the leakage current in a germanium transistor
A. One hundredth
B. One tenth
C. One thousandth
D. One millionth
Select an option to see the answer and solution.
The Q of an LC circuit is given by ___________
A. 2pfr x R
B. R / 2pfrL
C. 2pfrL / R
D. R2/2pfrL
Select an option to see the answer and solution.
Tuned class C amplifiers are used for RF signals of ___________
A. Low power
B. High power
C. Very high power
D. None of the above
Select an option to see the answer and solution.
The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by ___________
A. 100 µA
B. 25 µA
C. 20 µA
D. 50 µA
Select an option to see the answer and solution.
A silicon transistor is biased with base resistor method. If ß=100, VBE =0.7 V, zero signal collector current IC = 1 mA and VCC = 6V , what is the value of the base resistor RB?
A. 105 kΩ
B. 530 kΩ
C. 315 kΩ
D. None of the above
Select an option to see the answer and solution.
In a npn transistor, ___________ are the minority carriers
A. free electrons
B. holes
C. donor ions
D. acceptor ions
Select an option to see the answer and solution.
ICEO = () ICBO
A. ß
B. 1 + a
C. 1 + ß
D. none of the above
Select an option to see the answer and solution.
In a pnp transistor, the current carriers are ___________
A. acceptor ions
B. donor ions
C. free electrons
D. holes
Select an option to see the answer and solution.
The base of a transistor is ___________ doped
A. heavily
B. moderately
C. lightly
D. none of the above
Select an option to see the answer and solution.
The collector of a transistor is ___________ doped
A. heavily
B. moderately
C. lightly
D. none of the above
Select an option to see the answer and solution.
The emitter of a transistor is ___________ doped
A. lightly
B. heavily
C. moderately
D. none of the above
Select an option to see the answer and solution.
The base resistor method is generally used in
A. Amplifier circuits
B. Switching circuits
C. Rectifier circuits
D. None of the above
Select an option to see the answer and solution.
In voltage divider bias, operating point is 3 V, 2 mA. If VCC = 9 V, RC = 2.2 kΩ, what is the value of RE ?
A. 2000 Ω
B. 1400 Ω
C. 800 Ω
D. 1600 Ω
Select an option to see the answer and solution.
The number of depletion layers in a transistor is ___________
Select an option to see the answer and solution.
The element that has the biggest size in a transistor is ___________
A. collector
B. base
C. emitter
D. collector-base-junction
Select an option to see the answer and solution.
The input impedance of a transistor is ___________
A. high
B. low
C. very high
D. almost zero
Select an option to see the answer and solution.
The value of a of a transistor is ___________
A. more than 1
B. less than 1
C. 1
D. none of the above
Select an option to see the answer and solution.
The output impedance of a transistor is ___________
A. high
B. zero
C. low
D. very low
Select an option to see the answer and solution.
The most commonly used semiconductor in the manufacture of a transistor is ___________
A. germanium
B. silicon
C. carbon
D. none of the above
Select an option to see the answer and solution.