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ECE · all questions

VLSI Design And Testing
practice.

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183

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Mobility depends on

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. . . . . . . . . impurities are added to the wafer of the crystal.

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Which one of the following is the main factor for reducing the latch-up effect?

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The Bipolar Transistor is fabricated on . . . . . . . .

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According to body effect, substrate is biased with respect to . . . . . . . .

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Few parts of photoresist layer is removed by using . . . . . . . .

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Inversion layer in enhancement mode consists of excess of

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P-well is created on . . . . . . . .

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In N channel MOSFET which is the more negative of the elements?

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The work function difference is negative for . . . . . . . .

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As source drain voltage increases, channel depth . . . . . . . . .

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The parasitic PNP transistor has the effect of . . . . . . . . carrier lifetime.

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What is the condition for saturation?

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The BJTs in the BICMOS circuit is in . . . . . . . . configuration.

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What is Piranha Solution?

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Threshold voltage is negative for . . . . . . . .

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. . . . . . . . is sputtered on the whole wafer.

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What is the ratio of

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In resistive region . . . . . . . .

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The n-well created for Bipolar Transistor in BiCMOS is used as . . . . . . . .

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