Q241
Open questionFor the junction transistor, which of the following relation is true?
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Analog Electronics
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Q242
Open questionAn op-amp having input voltage Vi1 = 150 µV and Vi2 = 140 µV, differential gain Ad = 4000 and CMRR = 105. The output voltage of op-amp will be
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Q243
Open questionThe load impedance ZL of common emitter amplifier has R and L in series. The phase difference between output and input will be
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Q244
Open questionMatch List-I with List-II and select the correct answer using the options given below the lists:
| List-I (Name of the circuit) | List-II (Characteristics of the circuit) |
| a. Darlington Amplifier | 1. A circuit using pnp and npn transistors used in power amplifier. |
| b. Common base Amplifier | 2. A Common-source Amplifier driving a common gate amplifier. |
| c. Complementary Symmetry Amplifier | 3. A Circuit with overall voltage gain close to 1 and very large input impedance. |
| d. Cascode Amplifier | 4. A Circuit with low input impedance mainly used in high frequency applications. |
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Q245
Open questionThe overall bandwidth of two identical voltage amplifiers connected in cascade will be:
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Q246
Open questionThe voltage transfer characteristics as shown in the figure will relate to a
1. Voltage regulator
2. Half-wave rectifier
3. Full-wave rectifier
Which of the above is/are correct?
1. Voltage regulator
2. Half-wave rectifier
3. Full-wave rectifier
Which of the above is/are correct?
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Q247
Open questionA 5 mV, 1 kHz sinusoidal signal is applied to the input of an op-amp integrator for which R = 100 kΩ and C = 1 µF. the output voltage is:
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Q248
Open questionThe function of the diode D in the timer circuit shown below is to
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Q249
Open questionAn op-amp is used as a zero-crossing detector. If the maximum output voltage is ±15 Volt p-p and the slew rate is 10 V/µsec, then the maximum frequency will be
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Q250
Open questionA voltage VG is applied across a MOS capacitor with metal gate and p-type silicon substrate at T = 300 K. The inversion carrier density (in number of carriers per unit area) for VG = 0.8 V is 2 × 1011 cm-2. For VG = 1.3 V, the inversion carrier density is 4 × 1011 cm-2. What is the value of the inversion carrier density for VG = 1.8 V?
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Q251
Open questionA transistor is said to be useful to be configured as an amplifier when its β is
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Q252
Open questionIn BJT, DC load line joins
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Q253
Open questionIn the circuit of the relaxation oscillator shown in the given figure, what will be the change in the voltage waveform across capacitor, if the voltage V is doubled?
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Q254
Open questionAn N-channel JFET, having a pinch-off voltage (Vp) of -5V, shows a trans conductance (gm) of 1 mA/V when the applied gate-to-source voltage (VGS) is -3V. Its maximum trans conductance (in mA/V) is
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Q255
Open questionThe circuit using a BJT with β = 50 and VBE = 0.7 V is shown in the figure. The base current IB and collector voltage VC are respectively
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Q256
Open questionThe use of rectifier filter in a capacitor circuit gives satisfactory performance only when the load
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Q257
Open questionIn op-amp based inverting amplifier with a gain of 100 and feedback resistance of 47 kΩ, the op-amp input offset voltage is 6 mV and input bias current is 500 nA. the output offset voltage due to an input offset voltage and an input bias current, are
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Q258
Open questionThe Ebers Moll model is applicable to
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Q259
Open questionAn amplifier circuit is shown in the given figure:
The voltage gain is:
The voltage gain is:
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Q260
Open questionA peak detector comprises a capacitor and an ideal diode and an ac source in series.
The following is true of the circuit
The following is true of the circuit
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