The semiconductor bar is heated at one end, a voltage across the bar is developed. If the heated end is positive, the semiconductor is
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ECE · all questionsElectronic Devices And Circuits
Electronic Devices And Circuits
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In PN-junction diode, if doping concentration of acceptor atoms in P-region is increased then
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The output current versus input voltage transfer characteristics of an n-channel JFET is such that there is
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Which of the following is correct?
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Identify the correct statement about MOS capacitor-
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. . . . . . . . of the varactor-diode changes with the change in applied voltage.
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The reverse saturation current of a silicon diode doubles for every
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The leakage current in CE configuration may be around
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For the 2N338 transistor, the manufacturer specifies Pmax = 100 mW at 25°C free air temperature and the maximum junction temperature, Tjmax = 125°C. Its thermal resistance is
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The band gap energies for silicon and germanium photodiodes are 1.1 eV and 0.67 eV respectively, their cutoff wavelength respectively would be:
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Consider the following statements S1 and S2.
S1: The threshold voltage (VT) of a MOS capacitor decreases with increase in gate oxide thickness.
S2: The threshold voltage (VT) of a MOS capacitor decreases with increase in substrate doping concentration.
Which one of the following is correct?
S1: The threshold voltage (VT) of a MOS capacitor decreases with increase in gate oxide thickness.
S2: The threshold voltage (VT) of a MOS capacitor decreases with increase in substrate doping concentration.
Which one of the following is correct?
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Consider the following statements
S1: Silicon is indirect bandgap semiconductor
S2: Germanium is direct bandgap semiconductor
S3: Gallium Arsenide is direct bandgap semiconductor
S4: Indium Phosphide is indirect bandgap semiconductor
S1: Silicon is indirect bandgap semiconductor
S2: Germanium is direct bandgap semiconductor
S3: Gallium Arsenide is direct bandgap semiconductor
S4: Indium Phosphide is indirect bandgap semiconductor
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Which of the following statements are correct for the basic transistor amplifier configurations
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The band gap in eV of Si at 300 K is:
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Swept-out voltage in PIN diode happens when PIN diode is
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What happens to a diode, if the PIV rating of the diode is exceeded?
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The energy required to change the speed of one electron from rest to 0.6c is nearly:
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When silicon is doped with arsenic, each arsenic atom will give the crystal . . . . . . . .
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In the fabrication of n-p-n transistor in an IC, the buried layer on the p-type substrate is
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Dominant mechanism for motion of charge carriers in forward and reverse biased silicon p-n junctions are
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