Match
List-I with
List-II and select the correct answer using the options given below:
List-I (Regions of bipolar transistor in monolithic IC)List-II (Physical properties)
a. Emitter
1. Moderate resistivity
b. Base
2. Very high resistivity
c. Collector
3. Large size
d. Substrate
4. Very high conductivity
A. a-1, b-4, c-2, d-3
B. a-4, b-1, c-2, d-3
C. a-4, b-1, c-3, d-2
D. a-1, b-4, c-3, d-2
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A LED is emitting a mean wavelength of λ = 0.90 µm and its spectral half-width ∆λ = 18 nm. What is its relative spectral width?
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Solid state MASER is an amplifier of type
A. Diamagnetic
B. Paramagnetic
C. Ferromagnetic
D. Electromagnetic
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In a MOSFET gate, voltage controls:
A. Drain current
B. Source voltage
C. Drain voltage
D. Threshold voltage
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A combination of two diodes connected in parallel when compared to a single diode can withstand
A. Twice the value of peak inverse voltage
B. Twice the value of maximum forward current
C. A larger leakage current
D. Twice the value of cut-in voltage
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The drain-source voltage at which drain current becomes nearly constant, is called
A. Barrier voltage
B. Breakdown voltage
C. Pick-off voltage
D. Pinch-off voltage
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The circuit with a fixed emitter current is called
A. Base bias
B. Emitter bias
C. Transistor bias
D. Two-supply bias
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In which of the following materials does conduction happen due to thermal excitation or crystal defects?
A. Insulator
B. Intrinsic semiconductor
C. Extrinsic semiconductor
D. Metal
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The diffusion process in an IC fabrication is done by:
A. heating the wafers in an atmosphere of impurities
B. cooling the wafers inside an ingot
C. epitaxial growth
D. anodisation
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Which of the following materials is used in light-emitting diodes?
A. Gallium arsenide sulphate
B. Gallium arsenide phosphide
C. Gallium chromate phosphide
D. Gallium phosphide sulphate
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Which one of the following is used as a passive component in electronic circuit?
A. Resistor
B. Vacuum Tube
C. Transistor
D. Tunnel diode
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Which element has 10 electrons?
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The n-p-n transistor made of silicon has a DC base bias voltage 15 V and an input base resistor 150 KΩ. Then value of the base current into the transistor is
A. 0.953 µA
B. 9.53 µA
C. 95.3 µA
D. 953 µA
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MOSFET uses the electric field of
A. Gate capacitance to control the channel current
B. Barrier potential of PN junction to control the channel current
C. Both A and B
D. None of these
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P - N junction diode is not used for
A. Rectification
B. Maximum power transfer
C. Cliper circuit
D. Clamper circuit
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When the positive voltage on the gate of a p-channel JFET is increased, its drain current
A. Increases
B. Decreases
C. Remains the same
D. None of these
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When doping increases, . . . . . . . . of a semiconductor decreases
A. Impurity
B. Conductivity
C. Bulk resistance
D. Minority carrier
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At a given temperature a semiconductor with intrinsic carrier concentration ni = 1016 /m3 is doped with a donor of dopant concentration ND = 1026 /m3 . Temperature remaining the same the hole concentration in the doped semiconductor is
A. 1026 /m3
B. 1016 /m3
C. 1014 /m3
D. 106 /m3
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In a p-type semiconductor, the conductivity due to holes (σp ) is equal to (e = charge of hole, µp = hole mobility, p = hole concentration).
A. μ p p .e
B. p .e μ p
C. p .e . μ p
D. p .e . μ p 1
Select an option to see the answer and solution.
In a transistor leakage current mainly depends on
A. Doping of base
B. Size of emitter
C. Rating of transistor
D. Temperature
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