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Electronic Devices And Circuits
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Q181

A bipolar junction transistor has a common base forward short circuit current gain of 0.99. Its common emitter forward short circuit current gain will be

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Q182

In a MOSFET, the transfer characteristics can be used to determine which of the following device parameters:

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Q183

An one-sided abrupt junction has 10²¹ per m³ of dopants on the lightly doped side, zero bias voltage and a built-in potential of 0.2 V. The depletion width of the abrupt junction (taking q = 1.6 × 10^-19C, ∈_r = 16 and ∈₀ = 8.875 × 10^-12 F/m) is

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Q184

Consider the following statements related to a CMOS (Complementary metal oxide semiconductor) inverter:
1. It combines an n-channel and a p-channel MOS transistor.
2. For binary 1 input, both transistors are OFF.
3. For binary 0 input, both transistors are ON.
4. Whatever is the state of input, one transistor is ON while the other is OFF.
Which of the statements given above are correct?

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Q185

What is the approximate breakdown current that burns out the diode, if it has a breakdown voltage of 150 V and maximum power dissipation of 0.5 W

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Q186

The epitaxial growth allows the wafers to be . . . . . . . . by the diffusion process.

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Q187

A bar of intrinsic germanium 5 cm long is subjected to an electric potential of 12 V. If the velocity of electrons in bar is 75 m/s, then find mobility of electrons.

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Q188

A CMOS amplifier when compared to an N-channel MOSFET, has the advantage of

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Q189

The maximum speed of electronic switch can be . . . . . . . . operations per second

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Q190

The impurity atoms is semiconductors

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Q191

In a forward biased pn junction diode, the sequence of events that best describes the mechanism of current flow is

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Q192

Electron mobility of the following intrinsic elements in descending order is:

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Q193

The Darlington pair is mainly used for

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Q194

The diffusion capacitance of a p-n junction diode

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Q195

"Common Base" configuration refers to the configuration of a-

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Q196

If the common base DC current gain of a BJT is 0.98, its common emitter DC current gain is

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Q197

An n-type semiconductor is . . . . . . . .

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Q198

Match items in List-I with items in List-II most suitable.

List-I	List-II
a. LED	1. Heavy doping
b. Avalanche Photodiode	2. Coherent radiation
c. Tunnel diode	3. Spontaneous emission
d. LASER	4. Current gain

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Q199

Drift current is:

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Q200

If f(E) is Fermi dirac distribution function then 1-f(E) is the probability:
(Where E_f is Fermi level)

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