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Electronic Devices And Circuits
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Q141

Number of electron-hole pairs generated per incident photon is called . . . . . . . .

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Q142

The best electronic device for fast switching is

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Q143

In an extrinsic semiconductor the conductivity significantly depends upon:

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Q144

Consider the following statements regarding the formation of P-N junctions:
1. Holes diffuse across the junction from P-side to N-side.
2. The depletion layer is wiped out.
3. There is continuous flow of current across the junction.
4. A barrier potential is set up across the junction.
Which of the above statements are correct?

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Q145

The doping concentration on the p-side and n-side of a silicon diode are 1 × 10¹⁶ cm^-3, and 1 × 10¹⁷ cm^-3 respectively. A forward bias of 0.3 V is applied to the diode. At T = 300 K, the intrinsic carrier concentration of silicon n_i = 1.5 × 10¹⁰ cm^-3 and

\frac{kT}{q}

= 26mV. The electron concentration at the edge of the depletion region on the p-side is

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Q146

Which of the following is true?

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Q147

If the current in a diode is 10 mA at forward bias voltage of 0.1 V, static resistance is

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Q148

The number of LED display indicators in logic probes are

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Q149

Medium doping in Silicon and Germanium corresponds to impurity of the order of

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Q150

List-I is four different semiconductor devices. Match each device in List-I with its characteristic property in List-II.

List-I	List-II
a. BJT	1. Population inversion
b. MOS capacitor	2. Pinch-off voltage
c. LASER diode	3. Early effect
d. JFFT	4. Flat-band voltage

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Q151

What is one of the primary advantages of FET compared to BJT?

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Q152

Why is silicon dioxide (SiO₂) layer used in ICs?

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Q153

In a biased JFET, the shape of the channel is as shown in the given figure. because
Electronic Devices and Circuits mcq question image

Electronic Devices and Circuits mcq question image

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Q154

Practically, in order to create an electron-hole pair in a P-N junction diode, the energy of the incident photon should be

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Q155

In order to generate electron-hole pairs, the maximum wavelength of radiation for Silicon (Band gap = 1.1 eV) is

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Q156

The diffusion potential across P-N junction

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Q157

The quantum efficiency η for the photo detector is
Where,
I_ph = Average photocurrent
P_e = Average incident optical power
hc/λ = Incident photon energy

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Q158

Which statement is correct for Schottky diode?

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Q159

Assuming that the electron mobility in intrinsic silicon is 1500 cm²/V-Sec at room temperature (T = 300 K and the corresponding 'volt equivalent of temperature' V_T = 25.9 mV, what is the approximate value of the electron diffusion constant?

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Q160

In a forward-biased p-n diode with N_A >> N_D, the product of dynamic diode resistance and diffusion capacitance C_D equals:

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