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Electronic Devices And Circuits
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Q201

A thin P-type silicon sample is uniformly illuminated with light which generates excess carriers. The recombination rate is directly proportional to

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Q202

As the Fermi energy of silver is 8.8 × 10^-19 joule, the velocity of the fastest electron in silver at 0°K (Given: Rest mass of electron = 9.1 × 10^-31 kg) is

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Q203

The intrinsic carrier concentration of silicon sample at 300 K is 1.5 × 10¹⁶/m³. If after doping, the number of majority carriers is 5 × 10²⁰/m³, the minority carrier density is

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Q204

How many layers of material does a transistor have?

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Q205

In JFET, when operated above the pinch-off voltage, the

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Q206

In an intrinsic semiconductor, breaking of a covalent bond results in the generation of:

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Q207

Depletion type MOSFET operates in:

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Q208

What current does

I = Aq (\frac{D _{P}}{L _{P} N _{D}} + \frac{D _{n}}{L _{n} N _{A}}) n_{i}^{2},

represent in p-n junction diode? (Where the symbols have their usual meaning)

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Q209

In a MOSFET, the pinch-off voltage refers to

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Q210

Which of the following statements is not true for hole?

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Q211

Major characteristic of a liquid crystal compounds used in LCD is:

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Q212

CC amplifier has

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Q213

Germanium and silicon photo sensors have their maximum spectral response in the

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Q214

An intrinsic semiconductor at the absolute zero temperature

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Q215

The intrinsic carrier density at 300 K is 1.5 × 10¹⁰/cm³, in silicon for n-type silicon doped to 2.25 × 10¹⁵ atoms/cm³, the equilibrium electron and hole densities are

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Q216

Given V = 8V, L = 2m, V_d = 2 × 10⁴, Find the electric field in V/m and mobility µ in m²/V-sec.

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Q217

Which of the following quantities cannot be measured/determined using Hall effect?

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Q218

Consider the following statements:
X-rays are used for lithography in IC technology because
1. high resolution is achievable
2. scattering effects are small
3. they can be focused easily
4. they can be deflected easily
Which of the statements given above are correct?

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Q219

An n-type silicon sample of 10^-3 m length and 10^-10 m² cross sectional area has an impurity concentration of 5 × 10²⁰ atom/m³. If mobility of majority carries is 0.125 m²/v-sec, then the resistance of the sample will be . . . . . . . .

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Q220

The concentration of minority carriers in an extrinsic semiconductor under equilibrium is

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