ECE · all questions

Electronic Devices And Circuits
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Q241

Storage time of a transistor is the time taken for the collector curves to fall to

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Q242

A zener diode, when used in voltage stabilization circuits, is biased in

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Q243

Consider the following statements for a photo conducting material:
1. Its dark conductivity is small.
2. With the absorption of radiation, equal numbers of electrons and holes are produced.
Which of the statements given above is/are correct?

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Q244

A switched mode power supply operating at 20 kHz to 100 kHz range used as the main switching element is

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Q245

If a certain Zener diode has a Zener voltage of 3.6 V and reverse bias voltage of 5 V is applied across it, the Zener operates in . . . . . . . .

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Q246

Electronic distribution of an Si atom is

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Q247

The resistivity of a metal is a function of temperature because

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Q248

By increasing temperature, the electrical conductivity would:

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Q249

The speed power product for static CMOS is:

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Q250

A long-channel NMOS transistor is biased in the linear region with V_DS = 50 mV and is used as a resistance. Which one of the following statements is NOT correct?

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Q251

Which one of the following is not LED material?

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Q252

When donor atoms are added to semiconductor, it

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Q253

In a p-n-p transistor biased in the active region, in the n-type base, holes

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Q254

In transistor, if electrons flow into emitter,

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Q255

Energy band gap of an insulating materials is:

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Q256

Effectively, how many valence electrons are there in each atom within a silicon crystal?

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Q257

Which of the following are essentials of a transistor biasing circuit?
1. Proper zero signal collector current flow
2. V_CE should not fall below 0.5 V for Germanium and 1 V for Silicon
3. Ensure stabilization of operating point
4. Loading to the source

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Q258

Which one of the following is the exact expression for I^CEO (i.e. collector to emitter current with base open) in a junction transistor?
(Where I_CBO is the collector to base current with emitter open, and α is the common base current gain)

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Q259

The light output of LED varies as (Current)ⁿ, the value of n is about

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Q260

Which one of the following expressions may be used to correctly describe the temperature (T) variation of the intrinsic carrier density (n_i) of a semiconductor?
E_g is the band gap, A is pre-factor's k is Boltzmann constant.

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