Q121
Open questionMOSFET can be used as
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ECE · all questionsElectronic Devices And Circuits
Electronic Devices And Circuits
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Q122
Open questionA p-n junction diode's dynamic conductance is directly proportional to
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Q123
Open questionWhich of the following properties does CMOS logic possess?
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Q124
Open questionIn an intrinsic semiconductor, the mobility of electrons in the conduction band is
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Q125
Open questionAt absolute zero temperature, an intrinsic semiconductor behave like an insulator because of
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Q126
Open questionFor an n-type semiconductor having any doping level, which of the following hold(s) good:
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Q127
Open questionA photodiode is normally:
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Q128
Open questionA semiconductor specimen of breadth d, width w and carrying current I is placed in a magnetic field B to develop Hall voltage VH in a direction perpendicular to I and B. VH is NOT proportional to
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Q129
Open questionMiller indices are same for:
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Q130
Open questionFor smooth and reliable operation of an amplifier using BJT, it is necessary that the circuit must be properly designed from the point of view of bias stabilization, because
1. Reverse saturation current ICO increases with rise in temperature.
2. VBE decreases with rise in temperature.
3. hFE or β changes with change of temperature and replacement of the transistor.
4. hFE or β changes with change in collector supply voltage.
Which of these statements are correct?
1. Reverse saturation current ICO increases with rise in temperature.
2. VBE decreases with rise in temperature.
3. hFE or β changes with change of temperature and replacement of the transistor.
4. hFE or β changes with change in collector supply voltage.
Which of these statements are correct?
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Q131
Open questionAt higher forward voltages, a junction diode is likely to
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Q132
Open questionWhich one of the following is true with regard to photo emission?
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Q133
Open questionThe main purpose of oxidation in the IC fabrication process using silicon is:
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Q134
Open questionWhen the photoresist coating (during IC fabrication) is exposed to ultraviolet light the photoresist becomes
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Q135
Open questionA Zener diode works on the principle of
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Q136
Open questionIn a bipolar transistor biased in the forward-active region, the base current is IB = 50 µA and the collector current is IC = 2.7 mA. The value of α is:
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Q137
Open questionFor an abrupt junction varactor diode, the dependence of device capacitance (C) on applied reverse voltage (V) is given by
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Q138
Open questionThe electron and hole concentrations, n and p respectively obey the relation np = n2i where ni is the intrinsic carrier density. This expression is valid for which of the following?
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Q139
Open questionIn monolithic integrated circuits, the concentration of acceptor atoms in the region between isolation islands will be
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Q140
Open questionWhich of the following statement is true for a Schottky barrier diode?
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