Q141
Open questionThe dissipation at the collector is zero in the quiescent state and increase with excitation in the case of a
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Analog Electronics
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Q142
Open questionThe responsivity of the PIN photodiode shown is 0.9 A/W. To obtain Vout of -1 V for an incident optical power of 1 mW, the value of R to be used is
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Q143
Open questionIn the circuit shown below assume that diodes and op-amp are ideal. Suppose that V01 is the output voltage when input voltage is Vs = -1.0 V and V02 is the output voltage when input voltage is Vs = +1.0 V, then the value of V01 + V02 is
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Q144
Open questionThe circuit shown in figure is a
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Q145
Open questionConsider the following circuit using an ideal op-amp. The I-V characteristics of the diode is described by the relation where VT = 25 mV, I0 = 1 µA and V is the voltage across the diode (taken as positive for forward bias).
For an input voltage Vi = -1 V, the output voltage V0 is
For an input voltage Vi = -1 V, the output voltage V0 is
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Q146
Open questionA second-order band-pass active filter can be obtained by cascading a low-pass second-order section having cut-off frequency fOH with a high-pass second-order section having cut-off frequency fOL, provided
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Q147
Open questionIn the circuit shown in figure is a finite gain amplifier with a gain of K, a very large input impedance, and a very low output impedance. The input impedance of the feedback amplifier with the feedback impedance Z connected as shown will be
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Q148
Open questionIn a log amplifier the input is 'a'. The output will be proportional to
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Q149
Open questionDiodes are used to clip voltages in circuits because they act as:
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Q150
Open questionAn n-type MOSFET and an npn BJT are biased so that IC = ID = 1 mA, VGS = 1.3 V and VBE = 0.7 V. Threshold voltage for the MOSFET is 0.8 V and thermal voltage at the ambient temperature is given to be 25 mV. Transconductances of the BJT and the MOSFET are:
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Q151
Open questionFor a bipolar junction transistor, if the current amplification factor and cut-off frequency in the CB mode are αCB and fαCB respectively, then the cut-off frequency in the CE mode is equal to
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Q152
Open questionIn the circuit shown below, the silicon npn transistor Q has a very high value of β. The required value of R2 (in kΩ) to produce Ic = 1 mA is
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Q153
Open questionThe given circuit represents the amplifier type as:
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Q154
Open questionConsider the common-collector amplifier in the figure (bias circuitry ensures that the transistor operates in forward active region, but has been omitted for simplicity). Let IC be the collector current, VBE be the base-emitter voltage and VT be the thermal voltage. Also, gm and ro are the small-signal trans-conductance and output resistance of the transistor, respectively. Which one of the following conditions ensures a nearly constant small signal voltage gain for a wide range of values of RE?
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Q155
Open questionFind VO for the given circuit. (Assume ideal diode)
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Q156
Open questionWhich of the stages listed below would drive the loudspeaker, in a class D amplifier?
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Q157
Open questionIn a digital frequency meter, the Schmitt trigger is used for
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Q158
Open questionLeakage current approximately doubles for every 10°C increase in temperature of a silicon transistor. If a silicon transistor has ICBO = 1000 nA at 30°C, what is its leakage current at 90°C?
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Q159
Open questionIn an RC differentiator, the condition for differentiation is
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Q160
Open questionA circuit is shown in the given figure. The largest value of RL that can be used is
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