For a full wave rectifier, with sinusoidal input and inductor as filter, ripple factor for maximum load current and minimum load current conditions are respectively
Consider an n-channel MOSFET with parameters Kn = 0.25 mA/V2, VTN = 1 V, λ = 0, Cgd = 0.04 pF and Cgs = 0.2 pF
If the transistor is biased at VGS = 3 V, the unity gain bandwidth of an FET will be
For a full-wave rectifier with shunt capacitor filter, the peak to peak ripple voltage is
(where f = fundamental power line frequency, IDC = DC current)
An amplifier has a D.C. power supply of 15 V and draws a current of 10 mA. It produces an output of 5 V peak across a load resistance of 600 Ω for a signal frequency of 1 kHz. What will be its A.C. power output?
Determine the change in collector current, ∆IC due to change in base emitter voltage VBE from 25°C to 100°C for a Silicon Transistor in Fixed Bias Configuration having β = 100.
(Consider following variation in Silicon transistor parameters with temperature-At T = 25°C, VBE = 0.65 V and At T = 100°C. VBE = 0.5 V)
While using a bipolar junction transistor as an amplifier, the collector and emitter terminals got interchanged mistakenly. Assuming that the amplifier is a common emitter amplifier and the biasing is suitably adjusted, the interchange of terminals will results into which one of the following?
BJT is three terminal device which stands for bipolar junction transistor. Which of the following are true about BJT.
1. Base has smallest area to reduce the transit time.
2. collector is provided with the largest area to withstand heat dissipation.
3. BJT is a current controlled device.
4. BJT is a voltage controlled device.